A simulation study on single-event burnout in power normally-off AlGaN/GaN HEMT - 文章详情页

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This　paper　presents　the　electrical　behavior　of　normally-off　AlGaN/GaN　HEMT　under　heavy　ion　irradiation　based　on　technology　computer　aided　design　numerical　simulation　to　better　understand　single-event　burnout　(SEB).　Firstly,　the　effects　of　heavy　ion　impact　at　different　locations　on　the　device　are　simulated.　Secondly,　more　complex　radiation　angles　are　introduced　to　find　the　effects　of　different　angles　on　the　electrical　characteristics　of　the　device.　Finally,　the　most　sensitive　conditions　with　respect　to　SEB　failure　are　obtained.　©　2019　IEEE.

关键词：

Aluminum gallium nitride Computer aided design Gallium nitride Heavy ions III-V semiconductors Ion bombardment Radiation effects Radiation hardening

作者机构：

[ 1 ] [Hu, Dongqing]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
[ 2 ] [Zhang, Helong]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
[ 3 ] [Zhou, Xintian]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
[ 4 ] [Jia, Yunpeng]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
[ 5 ] [Wu, Yu]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
[ 6 ] [Li, Xinyu]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
[ 7 ] [Tang, Yun]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
[ 8 ] [Wang, Lihao]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China

通讯作者信息：

[zhou, xintian]beijing university of technology, faculty of information technology, beijing; 100124, china

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