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作者:

Lin, Chen (Lin, Chen.) | Zhan, Teng (Zhan, Teng.) | Liu, Zhiqiang (Liu, Zhiqiang.) | Yi, Xiaoyan (Yi, Xiaoyan.) | Xie, Hongyun (Xie, Hongyun.) | Wang, Junxi (Wang, Junxi.) | Li, Jinmin (Li, Jinmin.)

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摘要:

The purpose of this letter is to report a new optoelectronic device which consists of a wirelessly controllable driver circuitry and a slender implantable optical probe. Instead of the conventional silicon substrate, the probe is based on GaN material growing on a sapphire substrate. Thin-film blue micro light-emitting diodes (mu LEDs) with a total optical power density of 176.9 mW/mm(2) at 1 mA are directly fabricated at the probe by semiconductor device fabrication technologies. In a further research, we integrate a yellow mu LED on the probe to enable optical stimulation of both excitatory and inhibitory neurons. Besides, we adopt Bluetooth 4.0 wireless communication protocol; therefore, light emitting from the mu LEDs can be remotely controlled by a terminal with a distance as far as 20 m. The driver is also equipped with an accelerometer, a power management module, and a system-on-chip (SoC), and they are energized by a rechargeable lithium battery that has up to 10-h battery life. The whole device is a little bit bigger than a coin and weighs approximately 6 g. The probe has a length of 1.65 cm and a thickness of 150 mu m. These features make the device suitable for a broad variety of optogenetic experiments.

关键词:

optical neural probe Optogenetics wirelessly controllable optoelectronic device system-on-chip (SoC) driver circuitry micro light-emitting diodes (mu LEDs)

作者机构:

  • [ 1 ] [Lin, Chen]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
  • [ 2 ] [Zhan, Teng]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
  • [ 3 ] [Liu, Zhiqiang]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
  • [ 4 ] [Yi, Xiaoyan]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
  • [ 5 ] [Wang, Junxi]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
  • [ 6 ] [Li, Jinmin]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
  • [ 7 ] [Xie, Hongyun]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [Liu, Zhiqiang]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China;;[Yi, Xiaoyan]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China

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来源 :

IEEE PHOTONICS TECHNOLOGY LETTERS

ISSN: 1041-1135

年份: 2019

期: 12

卷: 31

页码: 915-918

2 . 6 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:123

JCR分区:2

被引次数:

WoS核心集被引频次: 4

SCOPUS被引频次: 5

ESI高被引论文在榜: 0 展开所有

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