To　evaluate　the　reliability　of　endure　high　voltage　when　IGBT　is　turned　off　and　eliminate　the　defective　devices,　HTRB　(High　Temperature　Reverse　Bias)　test　is　one　of　the　necessary　tests　for　IGBT　before　it＇s　produced.　According　to　the　IEC　standard,　DUTs　(Device　Under　Test)　are　usually　blocked,　and　bear　forward　bias　voltage,　which　is　preferably　80%　of　VCESmax.　During　the　HTRB　test,　DUT　junction　temperature　should　be　set　at　maximum　virtual　junction　temperature　Tvj(max)　which　is　usually　between　125°C　to　150°C.　Due　to　high　voltage,　even　though　the　leakage　current　is　very　low,　high-power　semiconductor　devices　generate　dissipated　power　during　HTRB　test,　which　lead　to　junction　temperature　increase.　And　to　access　the　reliability　accurately,　the　rise　of　temperature　cannot　be　neglected.　To　insure　the　test　is　carry　out　at　standard　temperature,　this　paper　monitors　DUTs　junction　temperature　by　using　leakage　current　as　a　TSEP　(Temperature　Sensitive　Electrical　Parameter),.　The　experiment　proofs　that　higher　the　junction　temperature　is,　the　more　accurate　the　measure　results　will　be,　in　the　operating　temperature　range.　In　this　paper,　thermal　resistance　measurement　is　used　to　evaluate　the　validity　of　this　method.　©　Published　under　licence　by　IOP　Publishing　Ltd.