Dual-wavelength　laser　sources　have　important　applications　in　the　interferometry　and　the　nonlinear-frequency-conversion　generated　mid-infrared　or　terahertz-band　coherent　radiation.　Vertical-external-cavity　surface-emitting　lasers　own　outstanding　advantages　such　as　high　output　power,　good　beam　quality　and　flexible　emission　wavelength,　which　make　them　very　suitable　for　dual-wavelength　running.　In　this　paper,　we　employ　a　collinear　Y-type　cavity　to　produce　a　dual-wavelength　laser.　There　are　two　semiconductor　gain　chips　in　the　resonant　cavity,　one　has　an　active　region　of　In0.815Ga0.815As/GaAs　strained　multiple　quantum　wells　and　a　designed　wavelength　of　960　nm,　and　the　other　has　an　active　region　of　In0.26Ga0.74As/GaAsP(0.02　)strained　multiple　quantum　wells　and　a　target　wavelength　of　1080　nm.　The　peak　wavelength　of　the　photoluminescence　of　chip　1　is　950　nm,　which　is　10　nm　shorter　than　the　designed　wavelength　under　weak　pump,　and　the　peak　wavelength　of　the　photoluminescence　of　chip　2　is　1094　nm,　which　is　14　nm　longer　than　the　target　wavelength　under　low　pump.　When　the　pump　power　is　increased,　the　peak　wavelengths　of　the　photoluminescence　of　two　gain　chips　are　both　red-shifted.　The　oscillating　laser　wavelengths　are　centered　at　953　nm　and　1100　nm,　the　corresponding　full　width　at　half　maximum　(FWHM)　values　of　the　laser　spectra　are　1.1　nm　and　2.7　nm,　respectively.　The　wavelength　spacing　of　the　dual-wavelength　is　147　nm,　and　the　related　mid-infrared　coherent　radiation　is　about　7.1　mu　m　on　the　assumption　that　the　dual-wavelength　laser　is　used　for　difference　frequency　generation.　When　the　absorbed　pump　power　of　each　gain　chip　is　5.8　W,　the　total　output　power　of　the　dual-wavelength　laser　reaches　293　mW　at　room　temperature.