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作者:

Li, Peng (Li, Peng.) | Jia, Chunlei (Jia, Chunlei.) | Liu, Chenjing (Liu, Chenjing.) | Wang, Shusheng (Wang, Shusheng.) | Xiong, Shengyang (Xiong, Shengyang.) | Wu, Yu (Wu, Yu.)

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摘要:

For the first time, this paper reveals and explains the details how to comprehend and deduce the evolution of current filaments in FRD by the negative resistance phenomenon presented in reverse recovery I-V curve. Further study on simulation data shows that the curve shape of voltage clamping period is caused by the generation of solitary filaments, and the definite correspondence relationship of them is discussed. © 2019 IEEE.

关键词:

Solid state devices Negative resistance

作者机构:

  • [ 1 ] [Li, Peng]Electronic Components Technology Center, China Academy of Llunch Vehicle Technology, Beijing, China
  • [ 2 ] [Jia, Chunlei]Electronic Components Technology Center, China Academy of Llunch Vehicle Technology, Beijing, China
  • [ 3 ] [Liu, Chenjing]Radiation Hardening Engineering Center, Beijing Microelectronics Technology Institute, Beijing, China
  • [ 4 ] [Wang, Shusheng]Electronic Components Technology Center, China Academy of Llunch Vehicle Technology, Beijing, China
  • [ 5 ] [Xiong, Shengyang]Electronic Components Technology Center, China Academy of Llunch Vehicle Technology, Beijing, China
  • [ 6 ] [Wu, Yu]Lab of Power Semiconductor Device, Beijing University of Technology, Beijing, China

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年份: 2019

语种: 英文

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