In　this　paper,　we　investigated　the　application　of　n-type　hydrogenated　microcrystalline　silicon　oxide　(n-μcSiOx:H)　as　the　front　surface　field　(FSF)　to　improve　the　shortcircuit　current　density　(JSC)　of　silicon　heterojunction　(SHJ)　solar　cells.　The　advantage　of　employing　n-μc-SiOx:H　layer　is　due　to　its　low　optical　absorption　coefficient　and　tunable　refractive　index.　However,　the　SHJ　solar　cell　performance　was　otherwise　limited　by　the　amorphous　oxygen　alloyed　silicon-based　films　which　probably　deteriorate　the　incubation　stage　of　the　n-μc-SiOx:H　layer.　To　reduce　amorphous/microcrystalline　mixture　phase　during　the　growth,　we　implemented　high　phosphorus-doped　seed　layer　deposited　prior　to　n-μc-SiOx:H　layer　with　refractive　indices　in　the　range　of　2.7　to　2.9.　Finally,　optimization　of　the　nμc-SiOx:H　layer　led　to　a　conversion　efficiency　of　23.9%,　with　JSC　of　39.1mA/cm2,　open　circuit　voltage　(VOC)　of　740mV,　and　fill　factor　(FF)　of　82.6%.　©　2019　IEEE.