Ultra-fast laser induced morphology and structure of Ge2Sb2Te5 Phase Change Materials - 文章详情页

作者：

Guo, J.C. (Guo, J.C..) | Liu, F.R. (Liu, F.R..) (学者：刘富荣) | Han, W.N. (Han, W.N..)

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摘要：

The　phase-change　behavior　of　amorphous　Ge2Sb2Te5　(GST)　films　induced　by　picosecond　pulsed　laser　was　investigated.　By　controlling　the　film　thickness,　laser　fluence　and　substrate　type,　GST　exhibited　obviously　different　morphology　and　structure.　©　2018　Optical　Society　of　America.

关键词：

Antimony compounds Germanium compounds Integrated optoelectronics Morphology Phase change materials Photonics Pulsed lasers

作者机构：

[ 1 ] [Guo, J.C.]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Guo, J.C.]Beijing Engineering Research Center of Applied Laser Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Liu, F.R.]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Liu, F.R.]Beijing Engineering Research Center of Applied Laser Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Han, W.N.]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Han, W.N.]Beijing Engineering Research Center of Applied Laser Technology, Beijing University of Technology, Beijing; 100124, China

通讯作者信息：

刘富荣
[liu, f.r.]beijing engineering research center of applied laser technology, beijing university of technology, beijing; 100124, china;;[liu, f.r.]institute of laser engineering, beijing university of technology, beijing; 100124, china

电子邮件地址：

Liufr@bjut.edu.cn

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