Junction Temperature measurement of SiC BJT via the voltage drop of VBC - 文章详情页

作者：

Shi, Bang-Bing (Shi, Bang-Bing.) | Feng, Shi-Wei (Feng, Shi-Wei.) (学者：冯士维) | He, Quan-Bo (He, Quan-Bo.) | Zhang, Ya-Min (Zhang, Ya-Min.) | Bai, Kun (Bai, Kun.)

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EI Scopus

摘要：

In　this　paper,　an　electrical　method　for　junction　temperature　estimation　of　Silicon　Carbide　Bipolar　Junction　Transistor　(SiC　BJT)　is　presented.　The　measurement　method　is　based　on　the　measurement　of　the　voltage　drop　of　VBC　at　low　current　(VBC　(low))　during　turn-off.　This　voltage　is　proportional　to　temperature　due　to　the　temperature-dependence　of　the　base-collector　PN　junction.　This　voltage　has　superior　sensitivity　and　linearity　to　temperature　reaching　almost　250°C.　©　2018　IEEE.

关键词：

Temperature distribution Temperature measurement Silicon carbide Bipolar transistors

作者机构：

[ 1 ] [Shi, Bang-Bing]Faculty of Information Technology, Beijing University of Technology, Beijing, China
[ 2 ] [Feng, Shi-Wei]Faculty of Information Technology, Beijing University of Technology, Beijing, China
[ 3 ] [He, Quan-Bo]Faculty of Information Technology, Beijing University of Technology, Beijing, China
[ 4 ] [Zhang, Ya-Min]Faculty of Information Technology, Beijing University of Technology, Beijing, China
[ 5 ] [Bai, Kun]Faculty of Information Technology, Beijing University of Technology, Beijing, China

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