Novel Design of SOI SiGe HBTs with High Johnson's Figure-of-Merit - 文章详情页

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EI Scopus

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A　novel　design　of　SOI　SiGe　HBTs　with　a　buried　n+　thin　layer　and　p-　doping　layer　is　proposed　to　improve　the　product　of　cutoff　frequency　and　breakdown　voltage,　which　is　a　vital　Johnson＇s　figure　of　merit　(J-FOM)　of　the　device.　In　this　design,　the　n+　thin　layer　is　used　to　increase　the　cutoff　frequency　and　the　p-　doping　layer　is　adopted　to　maintain　a　high　breakdown　voltage.　Furthermore,　the　thickness　of　n+　thin　layer　is　also　studied　to　improve　the　J-FOM.　As　a　result,　for　the　novel　SOI　SiGe　HBT,　the　J-FOM　is　increased　from　351.5GHz-V　to　482.3GHz-V,　when　compared　with　that　of　the　traditional　device.　This　design　effectively　develops　the　application　of　SOI　SiGe　HBTs　in　microwave　power.　©　2018　IEEE.

关键词：

Si-Ge alloys Product design Electric breakdown Microsystems Cutoff frequency Silicon

作者机构：

[ 1 ] [Wang, Li-Fan]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Jin, Dong-Yue]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Zhang, Wan-Rong]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Chen, Rui]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Guo, Bin]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Chen, Hu]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Liu, Hao]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China

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