Research on IGBT Module Failure Caused by Thermal Stress Damage - 文章详情页

作者：

收录：

EI Scopus

摘要：

In　this　paper,　according　to　the　analysis　of　insulated-gated　bipolar　transistor　(IGBT)　failure　module,　the　potential　reliability　defects　of　IGBT　module　are　evaluated　by　the　finite　element　method　(FEM).　The　simulation　model　is　based　on　a　commercial　device.　Results　show　that,　thermoelectric　stress　may　cause　the　deformation　of　IGBT　module,　and　then　form　the　solder　delamination　or　voids;　solder　defects　can　greatly　increase　the　junction　temperature,　which　makes　the　larger　deformation;　the　higher　duty　cycle　will　make　IGBT　module　deformation　increase,　which　is　easier　to　form　voids　or　cracks.　All　these　will　form　a　vicious　circle,　and　then　bring　higher　failure　risk.　©　2018　IEEE.

关键词：

Defects Deformation Insulated gate bipolar transistors (IGBT) Reliability analysis

作者机构：

[ 1 ] [Guo, Meng]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Zhang, Xiao-Ling]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Xie, Xue-Song]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Huo, Yu-Qian]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Qi, Shuai-Bing]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Hu, Dong-Dong]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至