Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO3/Nb:SrTiO3 heterostructure - 文章详情页

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BiFeO3　thin　films　were　deposited　on　Nb-doped　SrTiO3　substrates　by　radio-frequency　magnetron　sputtering.　They　were　annealed　in　760　and　1.5　Torr　of　oxygen,　respectively,　and　two　resistive　switching　polarities　were　observed　for　the　films.　Their　current　density-voltage　characteristics　comply　with　space-　charge-limited　(SCL)　conduction.　For　the　BiFeO3　thin　film　annealed　at　high　oxygen　pressure,　the　trapping/detrapping　of　charge　carriers　is　responsible　for　its　resistive　switching　effect.　For　the　film　annealed　at　low　pressure,　the　density　of　oxygen　vacancies　is　high,　and　the　modulation　of　the　interface　Schottky　barrier　by　the　migration　and　accumulation　of　oxygen　vacancies　should　play　the　dominant　role　in　the　resistive　switching　effect.　©　2018　IEEE.

关键词：

Annealing Bismuth compounds Carrier mobility Iron compounds Magnetron sputtering Niobium compounds Oxygen vacancies Pressure effects Schottky barrier diodes Strontium titanates Switching Thin films Titanium compounds

作者机构：

[ 1 ] [Yang, Ying]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Zhu, Hui]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Meng, Xiao]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Jin, Lei]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Wang, Chen]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Wang, Si]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Feng, Shiwei]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 8 ] [Guo, Chunsheng]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 9 ] [Zhang, Yamin]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China

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