Nonalloyed Cr/Au-based Ohmic contacts to n-GaAs of VCSELs - Details

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Abstract：

Compared　with　the　nonalloyed　AuGeNi/Au-based　ohmic　contacts　to　n-GaAs　in　convention,　the　nonalloyed　Cr/Au　is　a　non-magnetic　material　which　has　low　ohmic　contact　resistivity　and　it　eliminates　the　effect　of　the　laser　as　a　light　source　on　the　sensitivity　of　the　magnetic　measuring　equipment.　In　this　paper,　the　n-GaAs　ohmic　contact　resistivity　of　VCSEL　based　on　non-magnetic　materials　Cr/Au　is　measured　by　circular　dot　transmission　line　model　(CDTLM),　and　VCSEL＇s　reliability　is　studied　by　conductance　curve　method.　©　2018　IEEE.

Keyword：

Solid state devices Surface emitting lasers Gallium arsenide Electric contactors Magnetic materials Ohmic contacts Magnetism Semiconducting gallium III-V semiconductors

Author Community：

[ 1 ] [Guo, Yanling]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Li, Pengtao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Wang, Lifan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Chen, Rui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China

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Study of omni directional reflector in AlGaInP light emitting diodes
2008，Research and Progress of Solid State Electronics
Impact of mask on the effect of ICP etched on GaAs-based two-dimensional photonic crystals
2011，Nanotechnology and Precision Engineering
Luminescence properties of GaAs quantum dot-in-nanowire structure for quantum photonics
2015，Optoelectronic Devices and Integration, OEDI 2015
Luminescence properties of GaAs quantum Dot-in-Nanowire structure for quantum photonics
2015，Photonics for Energy, PFE 2015

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Year： 2018

Language： English

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SCOPUS Cited Count： 1

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30 Days PV： 10

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信息学部

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