Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs - 文章详情页

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The　residual　stress　of　AlGaN/GaN　HEMT　was　changed　by　substrate　thinning　process.　The　residual　compressive　stress　of　GaN　increased,　while　the　residual　tensile　stress　of　AlGaN　layer　decreased.　We　applied　an　external　tensile　stress　parallel　to　the　2DEG　channel,　causing　a　decrease　of　I_DS.　In　addition,　the　kink　effect　and　the　traps　behavior　were　also　affected　by　the　external　tensile　stress.　©　2018　IEEE.

关键词：

Aluminum gallium nitride Compressive stress Gallium nitride High electron mobility transistors III-V semiconductors Residual stresses Semiconductor alloys Tensile stress

作者机构：

[ 1 ] [Meng, Xiao]College of Microelectronics, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing, China
[ 2 ] [Zhu, Hui]College of Microelectronics, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing, China
[ 3 ] [Wang, Chen]College of Microelectronics, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing, China
[ 4 ] [Yang, Ying]College of Microelectronics, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing, China
[ 5 ] [Feng, Shiwei]College of Microelectronics, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing, China
[ 6 ] [Zhang, Yamin]College of Microelectronics, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing, China
[ 7 ] [Guo, Chunsheng]College of Microelectronics, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing, China

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