An　effective　method　for　identifying　the　spatial　positions　of　traps　in　GaN　high-electron-mobility　transistors　(HEMTs)　was　proposed　using　the　current　transients.　Two　traps　with　different　time　constants　were　demonstrated　in　the　AlGaN　barrier　layer　and　GaN　buffer　layer,　respectively.　In　particular,　their　trapping　and　de-trapping　mechanisms　were　also　characterized　by　various　electric　biases.　This　method　shows　its　advantages　in　convenience,　non-destructive　test,　and　the　amenability　in　long-term　stress　experiments.　©　2018　IEEE.