Mechanisms of power module metallization degradation under ageing - 文章详情页

作者：

Yuan, Xuequan (Yuan, Xuequan.) | An, Tong (An, Tong.) | Qin, Fei (Qin, Fei.) (学者：秦飞) | Zhao, Jingyi (Zhao, Jingyi.) | Fang, Chao (Fang, Chao.)

收录：

EI Scopus

摘要：

A　new　IGBT　finite　element　model　considering　conducting　channel　is　established.　The　mechanism　in　the　degradation　process　of　metallization　is　still　uncertain.　Thermal　stress　is　considered　to　be　an　important　factor.　Temperature　and　stress　field　were　obtained　by　the　new　model.　SEM　analysis　of　degradation　metallization　surface　under　DC　power　cycling　test　are　obtained,　and　compare　with　the　stress　distribution　of　the　simulation.　©　2018　IEEE.

关键词：

Electronics packaging Insulated gate bipolar transistors (IGBT) Metallizing

作者机构：

[ 1 ] [Yuan, Xuequan]Institute of Electronics Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [An, Tong]Institute of Electronics Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Qin, Fei]Institute of Electronics Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Zhao, Jingyi]Institute of Electronics Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Fang, Chao]Institute of Electronics Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至