Influence of base structural parameters on responsivity and characteristic frequency of SiGe Heterojunction Phototransistor - 文章详情页

作者：

收录：

EI Scopus

摘要：

The　effect　of　different　base　structural　parameters　on　SiGe　Heterojunction　Phototransistor　(HPT)　performance　is　analyzed　in　this　paper.　It　proposes　a　reference　for　designing　SiGe　HPT　with　both　high　responsivity　and　high　characteristic　frequency.　Responsivity　of　5.58　A/W　and　characteristic　frequency　of　21.29　GHz　for　850　nm　light　are　achieved　when　the　thickness　of　base　layer　is　70nm　with　the　doping　concentration　of　1.0×1019　cm-3.　©　2018　IEEE.

关键词：

Si-Ge alloys Silicon Phototransistors Integrated circuits Heterojunctions

作者机构：

[ 1 ] [Ma, Pei]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Xie, Hong-Yun]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Chen, Quan-Xiu]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Liu, Rui]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Chen, Liang]College of Physics and Electronic Engineering, Taishan University, Shandong; 271000, China
[ 6 ] [Wu, Jia-Hui]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Zhang, Wan-Rong]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至