Insulated　gate　bipolar　transistor　has　high　on-state　current　and　power　loss　when　it　operates.　The　temperature　produced　by　Joule　heating　causes　a　great　influence　on　IGBT＇s　reliability,　and　it　even　leads　the　IGBT　module　to　failure.　In　this　article,　a　DC　power-cycle　experimental　platform　is　built　up,　and　a　infrared　thermal　imager　is　used　for　measuring　the　temperature　distribution　of　the　IGBT　module　at　different　switching　frequencies.　The　external　trigger　shooting　function　can　make　the　infrared　detecting　camera　photographed　simultaneously　at　the　moment　of　the　heating　current　turned　off,　so　that　the　highest　temperature　of　the　chip　can　be　exact　measured.　The　electro-thermal-mechanical　coupling　finite　element　analysis　at　different　switching　frequencies　was　performed　by　using　ABAQUS　software.　The　results　of　electro-thermal　analysis　are　in　accordance　with　the　measure　data,　and　thermal-mechanical　analysis　gives　the　stress　spread　of　the　whole　module　at　different　switching　frequencies.　The　results　of　experimental　and　simulation　show　that　with　the　increase　of　switching　frequency,　the　junction　temperature　difference　of　the　IGBT　chip　decreases　and　the　maximum　stress　diminishes.　©　2018　IEEE.