This　paper　presents　the　simulation-based　comparison　between　silicon　(Si)　and　silicon　carbide　(SiC)　MOSFETs　on　the　single-event　burnout　(SEB)　performance　for　the　first　time.　The　safe　operation　areas　(SOAs)　regarding　SEB　are　extracted　and　compared　between　the　two　structures　when　the　heavy　ions　with　a　different　linear　energy　transfer　(LET)　strike　the　sensitive　areas　of　the　devices.　It　is　demonstrated　that　benefiting　from　the　higher　doped　drift　region,　SiCMOSFET　has　a　larger　SEB　threshold　voltagethan　Si　MOSFET　at　low　LET　range.　However,　it　is　the　other　way　around　at　high　LET　range,　which　is　attributed　to　the　thicker　epitaxy　of　Si　MOSFET.　The　introduction　of　buffer　layer　to　enhance　the　SEB　hardness　is　also　discussed.　Results　indicate　that　a　thicker　buffer　layer　is　required　for　SiC　MOSFET　to　enlarge　the　SOA,　resulting　in　a　more　serious　degradation　of　the　specific　ON-resistance　(R-ON,R-　sp).　Consequently,　other　hardening　solutions　need　to　be　further　explored　to　ensure　the　safe　operation　of　SiC　MOSFET　in　space　applications.