A novel SiGe heterojunction phototransistor detector based on silicon-on-insulator substrate - 文章详情页

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By　replacing　the　common　Si　substrate　with　the　silicon-on-insulator　(SOI)　substrate,　a　low　dark　current,　high　responsivity　and　high　response　speed　novel　SiGe　heterojunction　phototransistor　(HPT)　detector　is　illustrated　in　this　paper.　The　dark　current　of　novel　SOI-based　SiGe　HPT　is　as　low　as　0.91nA.　The　maximum　responsivity　of　novel　SOI-based　SiGe　HPT　is　3.86A/W,　a　37.86%　improvement　than　the　value　obtained　from　common　Si-based　SiGe　HPT.　The　maximum　photo-characteristic　frequency　(fT,ph　)　reach　up　to　26.43GHz,　improved　by1.94　times.　©　2018　IEEE.

关键词：

Heterojunctions Integrated circuits Silicon on insulator technology Image enhancement Phototransistors Si-Ge alloys Substrates

作者机构：

[ 1 ] [Liu, Rui]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Xie, Hong-Yun]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Jia, Rui-Wen]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Shen, Pei]Global Energy Interconnection Development and Cooperation Organization, Beijing; 100031, China
[ 5 ] [Chen, Liang]College of Physics and Electronic Engineering, Taishan University, Shandong; 271000, China
[ 6 ] [Ma, Pei]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Zhang, Wan-Rong]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China

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