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Author:

Sun, Jinglong (Sun, Jinglong.) | Qin, Fei (Qin, Fei.) (Scholars:秦飞) | Chen, Pei (Chen, Pei.) | An, Tong (An, Tong.)

Indexed by:

EI Scopus

Abstract:

Residual stress is the most concerned issue in wafer grinding process, because it affects wafer performance and can induce wafer warpage. In this paper, the residual stress in wafers machined by different processing parameters is measured by Raman Spectroscopy. The effects of wheel feed rate, wheel rotating speed and wafer rotating speed on residual stress are investigated. Radial distance as a dimensional parameter, whose effect on residual stress is also studied. The results show that the grinding parameters have influence on residual stress. Residual stress on wafer surface presents non uniform distribution. The residual stress close to wafer center is less than that on periphery. Investigations on residual stress of wafers machined by various processing parameters are important to parameters optimization. To explain the formation mechanism of residual stress, the surface and subsurface damages are observed by Scanning Electron Microscope (SEM). © 2017 IEEE.

Keyword:

Rotating machinery Electronics packaging Residual stresses Grinding (machining) Raman spectroscopy Wheels Scanning electron microscopy

Author Community:

  • [ 1 ] [Sun, Jinglong]College of Mechanical Engineering and Applied ElectronicsTechnology, Beijing University of Technology, Beijing, China
  • [ 2 ] [Qin, Fei]College of Mechanical Engineering and Applied ElectronicsTechnology, Beijing University of Technology, Beijing, China
  • [ 3 ] [Chen, Pei]College of Mechanical Engineering and Applied ElectronicsTechnology, Beijing University of Technology, Beijing, China
  • [ 4 ] [An, Tong]College of Mechanical Engineering and Applied ElectronicsTechnology, Beijing University of Technology, Beijing, China

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Source :

Year: 2017

Page: 327-331

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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