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作者:

Bie, Xiaorui (Bie, Xiaorui.) | Qin, Fei (Qin, Fei.) (学者:秦飞) | An, Tong (An, Tong.) | Zhao, Jingyi (Zhao, Jingyi.) | Fang, Chao (Fang, Chao.)

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EI Scopus

摘要:

As the demand of power converter for higher power density is increasing, bonding wire failure of IGBT module becomes more severe. Accordingly, it is of great significance to investigate the reliability of bonding wire under operating condition for improving the reliability of IGBT module. In this paper, the finite element model of IGBT module was established, and a two-step indirect coupling electro-thermal-mechanical analysis was conducted to evaluate the wire bonding reliability of IGBT module under the power cylcing. The thermal-mechanical analysis results indicate that the maximum equivalent plastic strain occurs at the corner of the bonded interface between the outermost bonding wire and the chip, where the cracks may initiate and then propagate along the interface, which is consistent with the observations of experimental results. It suggests that the outermost bonding wire is more likely to fail. © 2017 IEEE.

关键词:

Electronics packaging Insulated gate bipolar transistors (IGBT) Reliability Reliability analysis Wire

作者机构:

  • [ 1 ] [Bie, Xiaorui]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • [ 2 ] [Qin, Fei]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • [ 3 ] [An, Tong]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • [ 4 ] [Zhao, Jingyi]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • [ 5 ] [Fang, Chao]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China

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年份: 2017

页码: 1396-1401

语种: 英文

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SCOPUS被引频次: 17

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