Electro-thermal and thermal-mechanical FE analysis of IGBT module with different bonding wire shape - 文章详情页

作者：

Zhao, Jingyi (Zhao, Jingyi.) | Qin, Fei (Qin, Fei.) (学者：秦飞) | An, Tong (An, Tong.) | Bie, Xiaorui (Bie, Xiaorui.) | Fang, Chao (Fang, Chao.) 展开

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EI Scopus

摘要：

A　finite　element　model　which　contains　one　sixth　of　the　IGBT　module　based　on　a　real　test　chip　of　IGBT　module　is　established　to　investigate　the　temperature　and　stress　distribution　of　different　shape　bonding　wire.　The　finite　element　(FE)　analysis　which　coupled　electro-thermal　and　thermal-mechanical　are　conducted　using　commercial　software　ABAQUS.　The　thermal　performance　and　stress　distribution　of　IGBT　module　with　three　kinds　of　bonding　wire　respectively　shape,　named　Arc-shape,　Parabolic　shape　and　Trapezoidal　shape　are　discussed.　The　results　show　that　the　temperature　distribution　of　three　kinds　of　bonding　wire　is　similar,　but　the　stress　of　bonding　wire　is　quite　different.　Parabolic　shape　bonding　wire　has　the　minimum　stress　76.73　MPa.　Trapezoidal　shape　bonding　wire　has　the　maximum　stress　106.1　MPa.　©　2017　IEEE.

关键词：

Space platforms ABAQUS Temperature Stresses Stress concentration Wire Finite element method Insulated gate bipolar transistors (IGBT) Electronics packaging

作者机构：

[ 1 ] [Zhao, Jingyi]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Qin, Fei]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [An, Tong]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Bie, Xiaorui]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Fang, Chao]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing; 100124, China

通讯作者信息：

查看成果更多字段

Study on temperature distribution of IGBT module
2017，18th International Conference on Electronic Packaging Technology, ICEPT 2017
FE analysis the effect of bonding wire and solder failure on the resistance and temperature of IGBT
2018，19th International Conference on Electronic Packaging Technology, ICEPT 2018
Research on IGBT Module Failure Caused by Thermal Stress Damage
2018，14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Mechanisms of power module metallization degradation under ageing
2018，19th International Conference on Electronic Packaging Technology, ICEPT 2018

来源：

年份： 2017

页码： 548-551

语种：英文

被引次数：

WoS核心集被引频次： 0

SCOPUS被引频次： 13

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归属院系：

材料与制造学部本学院/部未明确归属的数据

材料与制造学部机械工程与应用电子技术学院

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