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作者:

Zhang, Hao (Zhang, Hao.) | Deng, Jinxiang (Deng, Jinxiang.) (学者:邓金祥) | Kong, Le (Kong, Le.) | Pan, Zhiwei (Pan, Zhiwei.) | Bai, Zhiying (Bai, Zhiying.) | Wang, Jiyou (Wang, Jiyou.)

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摘要:

To investigate the effect of thickness on the structural and optical properties of niobium-doped beta gallium oxide (beta-Ga2O3:Nb) thin films, a series of beta-Ga2O3:Nb thin films with different thicknesses were prepared by radio-frequency magnetron method. The crystalline quality is highly improved when the film thickness exceeds 145 nm. The surface exhibits different morphologies under different film thicknesses. The average transmittance of all the films are over 80% in visible range, and that the ultraviolet absorption edge shifts to longer wavelength indicates the bandgap shrinks with increasing the film thickness. Moreover, the photoluminescence spectrum measurements indicate that fewer defects were formed when the film thickness is around 145 nm.

关键词:

bandgap crystalline quality doping energy gap film thickness Ga2O3:Nb gallium compounds niobium niobium-doped beta-Ga2O3 thin films niobium-doped beta gallium oxide photoluminescence photoluminescence spectrum radio-frequency magnetron method sputter deposition surface morphology thin films ultraviolet absorption edge

作者机构:

  • [ 1 ] [Zhang, Hao]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Deng, Jinxiang]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 3 ] [Kong, Le]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 4 ] [Pan, Zhiwei]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 5 ] [Bai, Zhiying]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Jiyou]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

通讯作者信息:

  • 邓金祥

    [Deng, Jinxiang]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

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来源 :

MICRO & NANO LETTERS

ISSN: 1750-0443

年份: 2019

期: 6

卷: 14

页码: 701-704

1 . 3 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:50

被引次数:

WoS核心集被引频次: 3

SCOPUS被引频次: 3

ESI高被引论文在榜: 0 展开所有

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