The　softness　and　the　switching　losses　are　the　key　characteristics　to　evaluate　the　quality　of　the　ultra　voltage　power　diodes,　especially　for　high　frequency　application.　In　this　paper,　we　applied　the　Controlled　Injection　of　Backside　Holes　(CIBH)　structure　to　the　10kV　SiC　diode　based　on　TCAD,　by　which,　the　softness　and　snap-off　characteristics　of　the　diode　is　significantly　optimized　compared　with　conventional　diode.　In　addition,　the　termination　of　BA-JTE　guarantees　the　breakdown　voltage　of　the　diode.　Simulated　results　indicate　that　the　area　ratio　and　doping　concentration　of　the　CIBH　are　the　most　important　parameters　for　the　optimization　of　switching　characteristics.　©　2017　assigned　jointly　to　the　European　Power　Electronics　and　Drives　Association　and　the　Institute　of　Electrical　and　Electronics　Engineers　(IEEE).