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作者:

Zhang, Zhiwei (Zhang, Zhiwei.) | Chen, Pei (Chen, Pei.) | Qin, Fei (Qin, Fei.) (学者:秦飞)

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EI Scopus

摘要:

The subsurface damage has a siginificant effect on the strength of the wafer. To investigate the effect of the grinding speed and depth of cut on the surface and subsurface damage, a series of large scale MD simulation of nano grinding of silicon is performed. The results show that the monocrystalline silicon lattice undergoes extrusion and shear deformation, lattice reconstruction and amorphous phase transformation are also observed during the grinding process. It also turned that the grinding speed has an optimal value approximately 160m/s in the range of 50-400 m/s. By considering the variation of subsurface damage thickness for various depths of grinding at the grinding speed of 160m/s. The results show that the subsurface damage are gradually increasing from 9.5 Å to 20.5 Å with the augment of the depth of cut from 5 Å to 30 Å. Based on the above conclusions, it can be predicted that smaller depth of cut could reduce subsurface damage. © 2017 IEEE.

关键词:

Amorphous silicon Electronics packaging Grinding (machining) Molecular dynamics Monocrystalline silicon Silicon wafers

作者机构:

  • [ 1 ] [Zhang, Zhiwei]Research Center for Advanced Electronic Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • [ 2 ] [Chen, Pei]Research Center for Advanced Electronic Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • [ 3 ] [Qin, Fei]Research Center for Advanced Electronic Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China

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年份: 2017

页码: 487-490

语种: 英文

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 11

ESI高被引论文在榜: 0 展开所有

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