Double-sided edge termination of floating field rings for power semiconductor device - 文章详情页

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EI Scopus

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For　power　semiconductor　devices,　such　as　IGBTs,　MOSFETs　and　FRDs,　a　high　area　efficiency　of　the　edge　termination　structure　can　enlarge　the　active　area　and　thus　improve　the　current　capacity　for　a　given　chip　area.　In　this　paper,　a　double-sided　edge　termination　(DSET)　is　proposed　for　the　first　time.　Simulation　results　show　that　it　can　improve　the　breakdown　voltage　by　about　42%　without　increasing　the　width　or　area　of　edge　the　termination　and　the　thickness　of　the　chip.　©　2017　IEEE.

关键词：

Electric breakdown Semiconductor device structures MOSFET devices Power semiconductor devices Efficiency

作者机构：

[ 1 ] [Cui, Lei]Global Energy Interconnection Research Institute, Beijing; 102209, China
[ 2 ] [Cui, Lei]State Key Lab of Advanced Power Transmission Technology, Beijing; 102209, China
[ 3 ] [Wen, Jialiang]Global Energy Interconnection Research Institute, Beijing; 102209, China
[ 4 ] [Wen, Jialiang]State Key Lab of Advanced Power Transmission Technology, Beijing; 102209, China
[ 5 ] [Liu, Chenjing]Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Jin, Rui]Global Energy Interconnection Research Institute, Beijing; 102209, China
[ 7 ] [Jin, Rui]State Key Lab of Advanced Power Transmission Technology, Beijing; 102209, China
[ 8 ] [Pan, Yan]Global Energy Interconnection Research Institute, Beijing; 102209, China
[ 9 ] [Pan, Yan]State Key Lab of Advanced Power Transmission Technology, Beijing; 102209, China
[ 10 ] [Qiu, Yufeng]Global Energy Interconnection Research Institute, Beijing; 102209, China
[ 11 ] [Qiu, Yufeng]State Key Lab of Advanced Power Transmission Technology, Beijing; 102209, China
[ 12 ] [Li, Peng]Beijing University of Technology, Beijing; 100124, China
[ 13 ] [Wu, Yu]Beijing University of Technology, Beijing; 100124, China

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