Role of ohmic contact resistance on current characteristics of SiC diodes - 文章详情页

作者：

Feng, Ruirui (Feng, Ruirui.) | Xie, Xuesong (Xie, Xuesong.) | Meng, Ju (Meng, Ju.) | Tian, Ce (Tian, Ce.) | Zhang, Yinan (Zhang, Yinan.)

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摘要：

SiC　rectifier　diodes　are　important　components　in　the　power　electronics　industry　because　they　have　advantages　over　conventional　silicon　diodes,　including　large　currents,　high　operation　temperatures,　and　other　similar　properties.　In　the　devices＇　current-voltage　characteristics,　it　is　readily　observable　that　the　curves　at　different　temperatures　have　a　common　cross-over　point.　We　found　that　the　temperature　dependence　of　the　ohmic　contact　resistance　may　explain　this　behavior.　To　verify　this,　we　constructed　a　simple　model,　which　demonstrated　that　this　phenomenon　is　caused　by　the　proportional　relationship　between　resistance　and　temperature.　©　2016　IEEE.

关键词：

Contact resistance Current voltage characteristics Diodes Electric contactors Electric rectifiers Electronic equipment manufacture Electronics industry Integrated circuits Ohmic contacts Silicon carbide Silicon compounds Temperature distribution

作者机构：

[ 1 ] [Feng, Ruirui]College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Xie, Xuesong]College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Meng, Ju]College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Tian, Ce]College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Zhang, Yinan]College of Microelectronics, Beijing University of Technology, Beijing; 100124, China

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