Layout design of strained Si/SiGe HBT with segmented emitter to compensate the thermal effects - 文章详情页

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EI Scopus

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Based　on　the　established　thermal　network　of　strained　Si/SiGe　HBT　with　segmented　emitter,　the　effect　of　segment　spacing　and　segment　number　on　the　peak　temperature　is　studied.　Increase　both　of　segment　spacing　and　segment　number　could　lower　the　peak　temperature,　decrease　the　heating　coupling　factor,　and　hence　improve　the　temperature　uniformity.　Furthermore,　a　novel　strained-Si　SiGe　HBT　with　multi-segmented　emitter　and　non-uniform　segment　spacing　is　proposed　to　further　compensate　the　self-heating　effect　and　the　thermal　coupling　effect.　©　2016　IEEE.

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Couplings Si-Ge alloys

作者机构：

[ 1 ] [Zhao, Xinyi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Wang, Xiao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Guo, Yanling]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Wang, Di]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China

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