V-band 130 nm CMOS multistage amplifier incorporating gain-boosting technique - 文章详情页

作者：

Zhang, Ming-Ming (Zhang, Ming-Ming.) | Wu, Hsien-Shun (Wu, Hsien-Shun.) | Tzuang, Ching-Kuang C. (Tzuang, Ching-Kuang C..)

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EI Scopus

摘要：

To　design　a　high　gain　amplifier　at　V-band　using　130　nm　CMOS　process,　the　gain-boosted　technique　is　adopted　to　increase　the　maximum　achievable　gain　(Gmax).　Impedance　matching　synthesis　is　investigated　for　input　and　output　matching　circuits　based　on　transmission　lines.　By　adopting　appropriate　transistor　size,　a　single　stage　amplifier　can　achieve　the　maximum　gain　of　10　dB　at　53　GHz.　©　2016　IEEE.

关键词：

Amplifiers (electronic) CMOS integrated circuits Electric lines Impedance matching (electric)

作者机构：

[ 1 ] [Zhang, Ming-Ming]School of Electronic Information Engineering, Tianjin University, China
[ 2 ] [Wu, Hsien-Shun]School of Electronic Information Engineering, Tianjin University, China
[ 3 ] [Tzuang, Ching-Kuang C.]THZ Microelectronics Science and Technology, Co., Ltd., China
[ 4 ] [Tzuang, Ching-Kuang C.]University of Chinese Academy of Sciences, China
[ 5 ] [Tzuang, Ching-Kuang C.]Beijing University of Technology, China

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