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This paper presents a MTJ Based non-volatile SRAM in 45 nm technology. It combines fast and low power partners with time-division satisfaction of high performance and low leakage energy requirements. It can store and restore the data in memory cells, inputs, outputs, clock, and address signals. Simulations show that the maximum frequency can reach 4.5 GHz. When the sleep time is more than 105 seconds, there are great power saving. © 2016 IEEE.
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