Compared　to　traditional　silicon　based　semiconductors,　wide　band　gap　semiconductors　(e.g.　GaN　and　SiC)　have　been　widely　used　in　high　power　electronics　with　their　advantages　of　higher　thermal　conductivity,　higher　breakdown　field　strength,　higher　operating　temperature　and　lower　power　loss.　The　SiC　power　diode　packages,　including　Schottky　Barrier　Diode　(SBD)　and　Junction　Barrier　Schottky　(JBS),　are　usually　manufactured　with　the　SiC　die　as　a　function　chip　and　aluminum　wires　as　interconnections.　Since　aluminum　wires　are　usually　operated　under　the　condition　of　high　temperature　and　high　power　cycling,　their　fatigue　damage　is　considered　as　one　of　great　failures　happened　in　package　level.　Because　of　the　mismatch　of　coefficient　of　thermal　expansions　(CTEs)　between　the　interconnections,　aluminum　wires　are　highly　stressed　under　a　multiple　electrical-thermo-mechanical　condition.　This　paper　assesses　the　reliability　of　wire　bonds　in　a　SiC　SBD　package　under　an　accelerated　operation　test　condition　with　higher　currents.　And　the　fatigue　damage　of　the　wire　bond　was　predicted　by　using　a　multi-physics　finite　element　(FE)　simulation　method.　In　details,　the　strain-based　and　stress-based　3D　finite　element　simulation　models,　which　will　be　afforded　to　the　traditional　strain-based　Coffin-Manson　model　and　stress-based　Basquin＇s　equation　for　fatigue　life　prediction,　were　chosen　to　simulate　the　stress/strain　density　distribution　of　the　wire　bond　in　the　SiC　SBD　package.　Finally,　the　effects　of　the　high　current　conditions　on　the　the　stress/strain　density　distribution　of　the　wire　bond　were　analyzed　based　on　the　simulation　results.　©　2016　IEEE.