Silicon-based germanium photodetectors - 文章详情页

作者：

Li, Chong (Li, Chong.) | Xia, Guo (Xia, Guo.) (学者：郭霞) | Xue, Chunlai (Xue, Chunlai.) | Wang, Qiming (Wang, Qiming.)

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EI Scopus

摘要：

Silicon-based　germanium　photodetectors　are　supposed　to　play　an　important　role　in　the　future　optical　interconnects　system.　This　paper　introduces　our　recent　progresses　on　the　Si-based　Ge　devices,　such　as　normal-incident/waveguide　p-i-n　photodetectors,　and　avalanche　photodetectors　(APD).　©　OSA　2015.

关键词：

Germanium Integrated optoelectronics Photodetectors Silicon Photons

作者机构：

[ 1 ] [Li, Chong]Photonic Device Research Laboratory, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Xia, Guo]Photonic Device Research Laboratory, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Xue, Chunlai]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 4 ] [Wang, Qiming]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

通讯作者信息：

[li, chong]photonic device research laboratory, beijing university of technology, beijing; 100124, china

电子邮件地址：

lichong@bjut.edu.cn

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