Luminescence properties of GaAs quantum dot-in-nanowire structure for quantum photonics - 文章详情页

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摘要：

We　investigate　light　characters　of　GaAs　quantum　dot-in-nanowire　structure　by　cathodoluminscence.　Exciton　intensity　of　QDs　is　∼5　times　stronger　than　the　nanowire.　Promising　properties　attribute　to　cavity　enhancement　and　quantum　confinement　by　surrounding　AlGaAs　barriers.　©　OSA　2015.

关键词：

Aluminum alloys Aluminum gallium arsenide Gallium arsenide III-V semiconductors Integrated optoelectronics Luminescence Nanocrystals Nanowires Semiconducting gallium Semiconductor alloys Semiconductor quantum dots

作者机构：

[ 1 ] [Wang, Li]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Yu, Ying]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 3 ] [Wei, Bin]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Mao, Shengcheng]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Han, Xiaodong]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Niu, Zhichuan]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 7 ] [Ji, Yuan]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China

通讯作者信息：

[ji, yuan]institute of microstructure and properties of advanced materials, beijing university of technology, beijing; 100124, china

电子邮件地址：

jiyuan@bjut.edu.cn

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