Subsurface damage distribution of ground silicon wafers - 文章详情页

作者：

Yan, Debao (Yan, Debao.) | Qin, Fei (Qin, Fei.) (学者：秦飞) | Sun, Jinglong (Sun, Jinglong.) | Wang, Zhongkang (Wang, Zhongkang.) | Tang, Liang (Tang, Liang.)

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摘要：

The　subsurface　damage　(SSD)　distributions　in　different　crystal　orientations　and　radial　locations　of　silicon　wafers　(100)　are　analyzed　through　cross-section　microscopy　method.　The　experimental　results　show　that　the　subsurface　damage　depth　is　non-uniform　in　the　ground　wafer.　Along　the　radial　direction,　the　subsurface　damage　depth　increases　from　the　center　to　the　edge　of　the　wafer,　and　the　depth　in　crystal　orientation　is　larger　than　that　in　crystal　orientation.　©　2014　IEEE.

关键词：

Electronics packaging Grinding (machining) Silicon wafers Crystal orientation

作者机构：

[ 1 ] [Yan, Debao]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
[ 2 ] [Qin, Fei]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
[ 3 ] [Sun, Jinglong]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
[ 4 ] [Wang, Zhongkang]CETE Beijing Electronic Equipment Co., Ltd, Beijing, China
[ 5 ] [Tang, Liang]CETE Beijing Electronic Equipment Co., Ltd, Beijing, China

通讯作者信息：

[yan, debao]college of mechanical engineering and applied electronics technology, beijing university of technology, beijing, china

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