The　(Ga2O3)(x)(Co)(0.6-x)(ZnS/Se)(0.4)　thin　film　was　fabricated　by　the　PLD　of　different　pressure　and　substrate　temperature.　The　ability　to　control　the　growth　of　nano-scale　films　is　proved　by　the　results　of　thickness.　The　antireflection　coating　materials　in　the　infrared　spectral　region　are　affirmed　by　the　results　of　refractivity.　The　change　of　material　composition　having　an　important　effect　on　the　preparation　process　is　depicted　by　the　plasma　plume.　Stable　amorphous　structure　is　confirmed　by　XRD　under　the　different　preparation　conditions.　The　change　of　material　composition　has　an　important　impact　on　the　bonding　and　microstructure　of　the　material,　which　is　confirmed　by　Raman　spectra.　The　high　transmittance　in　range　500-2500　nm　is　revealed　in　transmission　spectra.　The　adjustable　optical　band　is　demonstrated　via　Tauc＇s　equation　calculation.　The　blue-shift　of　the　PL　spectra　due　to　the　change　of　concentration　is　certified.　The　highest　mobility　and　changeable　resistivity　among　existing　chalcogenide　material　are　reflected　via　Hall　measurements.　In　conclusion,　the　specific　concentration　of　multi-materials　used　in　the　infrared　field　is　obtained,　and　of　nano　film　with　transmittance　to　98%-100%　is　got　in　the　range　1500-2500　nm.　The　high　mobility　8.646　x　10(4)　cm(2)　(V　S)　and　low　resistivity　2.3　Omega.cm　in　the　presented　chalcogenide　based　multi-materials　are　tested.　Therefore,　we　successfully　accomplished　the　combination　of　semiconductor　oxide　and　chalcogenide.　Multi-incorporation　nano-composites,　which　can　be　applied　both　in　the　field　of　optical　and　electricity　by　adjusting　the　doping　elements　concentration,　are　reported　in　this　work.