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摘要:
A dual-band low noise amplifier (DBLNA), which can operate at 2.4 GHz and 5.8 GHz, is designed and realized. Infineon BFP740 SiGe HBTs are chose as active device, the cascode structure with high isolation and wider bandwidth is selected as gain circuit stage, whose bias current is selected to obtain minimum noise figure. In order to cope with the error of board technology and the PCB transmission loss, an additional stage is added into the cascode amplifier stage, both the peaking inductor and the RC circuit are utilized to compensate the decrease of high-frequency gain. A voltage divider circuit by resistor is employed to provide bias current, and the bias point is determined by scanning IB-NF. For the sake of miniaturization and adjustability, the π-type micro-strip line is used to achieve input/output matching. The combination of the electromagnetic simulation and the schematic diagram simulation, so-called co-simulation, is used to guarantee the simulation results are close to actual case. Finally the board-level layout is designed and the DBLNA PCB is fabricated and measured. © 2014 WIT Press.
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