Research of high performance Ge/Si avalanche photodiodes for single-photon detection - 文章详情页

作者：

Li, Chong (Li, Chong.) | Xue, Chunlai (Xue, Chunlai.) | Guo, Xia (Guo, Xia.) (学者：郭霞) | Liu, Zhi (Liu, Zhi.)

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摘要：

A　separate-absorption-charge-multiplication　Ge/Si　avalanche　photodiode　was　designed.　The　devices　have　high　dark　current　at　low　reverse　bias,　because　of　surface　impurity　and　rough　sidewall.　A　guard-ring　structure　and　in-situ　doping　was　introduced　to　decrease　leakage-current.　©　OSA　2014

关键词：

Avalanche photodiodes Photonics Particle beams

作者机构：

[ 1 ] [Li, Chong]Photonic Research Lab, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Xue, Chunlai]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 3 ] [Guo, Xia]Photonic Research Lab, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Liu, Zhi]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

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