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Author：

Li, Chong (Li, Chong.) | Xue, Chunlai (Xue, Chunlai.) | Guo, Xia (Guo, Xia.) (Scholars：郭霞) | Liu, Zhi (Liu, Zhi.)

Indexed by：

EI Scopus

Abstract：

A　separate-absorption-charge-multiplication　Ge/Si　avalanche　photodiode　was　designed.　The　devices　have　high　dark　current　at　low　reverse　bias,　because　of　surface　impurity　and　rough　sidewall.　A　guard-ring　structure　and　in-situ　doping　was　introduced　to　decrease　leakage-current.　©　OSA　2014.

Keyword：

Avalanche photodiodes Particle beams Photonics

Author Community：

  • [ 1 ] [Li, Chong]Photonic Research Lab, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Xue, Chunlai]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 3 ] [Guo, Xia]Photonic Research Lab, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Liu, Zhi]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

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Year： 2014

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 2

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

信息学部

材料与制造学部

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