Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm - 文章详情页

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A　novel　passively　mode-locked　semiconductor　edge-emitting　laser　is　reported,　based　on　an　AlGaAs　multi-quantum-well　structure.　Ultra　short　pulses　are　generated　at　752　nm,　with　a　19.4-GHz　repetition　rate　and　a　pulse　duration　of　3.5　ps.　©　2014　IEEE.

关键词：

Aluminum alloys Aluminum gallium arsenide Gallium alloys Gallium compounds Mode-locked fiber lasers Passive mode locking Pulse repetition rate Quantum well lasers Semiconductor alloys Semiconductor quantum wells Ultrashort pulses

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[ 1 ] [Kong, L.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee; DD1 4HN, United Kingdom
[ 2 ] [Wang, H.L.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 3 ] [Bajek, D.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee; DD1 4HN, United Kingdom
[ 4 ] [Haggett, S.E.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee; DD1 4HN, United Kingdom
[ 5 ] [Forrest, A.F.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee; DD1 4HN, United Kingdom
[ 6 ] [Wang, X.L.]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Cui, B.F.]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 8 ] [Pan, J.Q.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 9 ] [Ding, A.Y.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee; DD1 4HN, United Kingdom
[ 10 ] [Ding, A.Y.]School of Engineering, University of Glasgow, Glasgow; G12 8LT, United Kingdom
[ 11 ] [Cataluna, M.A.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee; DD1 4HN, United Kingdom

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