Novel emitter-segmented power HBT with 2-D non-uniform segment spacing for high thermal stability - 文章详情页

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With　the　aid　of　the　thermal　model,　thermal　resistance　matrix　of　emitter-segmented　power　HBT　is　proposed　to　represent　thermal　effects.　The　effect　of　2-dimensional　(2-D)　inter-segment　spacing　on　thermal　stability　of　device　is　studied.　It　is　shown　that　the　increase　of　inter-segment　spacing　could　effectively　decrease　thermal　coupling　resistance,　lower　temperature　of　center　segments,　and　hence　improves　the　thermal　stability.　Furthermore,　a　novel　emitter-segmented　power　HBT　with　2-D　non-uniform　segment　spacing　is　proposed,　in　which　the　non-uniformity　of　segment　temperature　is　improved　by　75.26%　and　the　maximum　power　level　difference　of　emitter　segment　is　improved　by　55.84%,　when　compared　with　uniform　segment　spacing　HBT.　Therefore　the　technique　of　2-D　non-uniform　segment　spacing　is　a　better　method　for　enhancing　the　thermal　stability　of　power　HBTs.　©　(2013)　Trans　Tech　Publications,　Switzerland.

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Heterojunction bipolar transistors Machinery Thermodynamic stability

作者机构：

[ 1 ] [Jin, D.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Hu, R.X.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhang, W.R.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Lu, D.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Fu, Q.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Zhang, Y.J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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