Simultaneous optimization of Ge doping profile and layout in multi-finger power SiGe HBTs for high thermal stability - 文章详情页

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Considering　the　effect　of　electro-thermal　feedback　on　the　thermal　stability　of　multi-finger　power　SiGe　HBT,　optimization　of　SiGe　HBT　on　both　Ge　doping　profile　(electrical　aspect)　and　layout　(thermal　aspect)　is　demonstrated　in　this　paper.　A　novel　stepped　Ge　doping　profile　of　SiGe　HBT　with　a　grading　Ge　concentration　in　base　region　is　proposed　to　improve　the　temperature　coefficient　of　current　gain,　meanwhile,　the　cut-off　frequency　of　HBT　is　also　increased　considerably　due　to　the　accelerated　electric　field　caused　by　the　Ge　concentration　grading.　However,　there　is　still　an　uneven　temperature　distribution.　Therefore,　the　layout　of　multi-finger　HBT　with　nun-uniform　emitter　finger　length　is　optimized　to　compensate　the　thermal　coupling　effects　and　hence　the　uneven　temperature　distribution　is　improved　obviously.　It　is　shown　that　the　device　with　simultaneous　optimization　of　Ge　doping　profile　and　layout　could　be　in　thermal　stability　over　a　wide　temperature　range,　which　presents　useful　guideline　to　design　microwave　power　HBTs.　©　(2013)　Trans　Tech　Publications,　Switzerland.

关键词：

Heterojunction bipolar transistors Electric fields Grading Temperature distribution Optimization Germanium Manufacture Thermodynamic stability

作者机构：

[ 1 ] [Hua, R.X.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Jin, D.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhang, W.R.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Lu, D.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Fu, Q.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Zhu, X.F.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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