Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition - Details

Author：

Wang, Y.Q. (Wang, Y.Q..) | Wang, R.Z. (Wang, R.Z..) (Scholars：王如志) | Wang, B.B. (Wang, B.B..) | Wang, B. (Wang, B..) (Scholars：王波) | Yan, H. (Yan, H..)

Indexed by：

EI Scopus

Abstract：

Gallium　n　itride　nanowires　(GaN　NWs)　were　synthesized　by　plasma-enhanced　hot　filament　chemical　vapor　deposition.　The　structures　and　photoluminescence　properties　were　measured　and　analyzed.　©　OSA　2013.

Keyword：

III-V semiconductors Chemical vapor deposition Photoluminescence Nanowires Nanophotonics Nanosensors Gallium nitride Nanoelectronics

Author Community：

[ 1 ] [Wang, Y.Q.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China
[ 2 ] [Wang, R.Z.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China
[ 3 ] [Wang, B.B.]College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054, China
[ 4 ] [Wang, B.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China
[ 5 ] [Yan, H.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China

Reprint Author's Address：

王如志
[wang, r.z.]college of materials science and engineering, beijing university of technology, 100 pingleyuan, chaoyang distract, beijing 100124, china

Email：

wrz@bjut.edu.cn

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