Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition - 文章详情页

作者：

Wang, Y.Q. (Wang, Y.Q..) | Wang, R.Z. (Wang, R.Z..) (学者：王如志) | Wang, B.B. (Wang, B.B..) | Wang, B. (Wang, B..) (学者：王波) | Yan, H. (Yan, H..)

收录：

EI Scopus

摘要：

Gallium　n　itride　nanowires　(GaN　NWs)　were　synthesized　by　plasma-enhanced　hot　filament　chemical　vapor　deposition.　The　structures　and　photoluminescence　properties　were　measured　and　analyzed.　©　OSA　2013.

关键词：

Chemical vapor deposition Gallium nitride III-V semiconductors Nanoelectronics Nanophotonics Nanosensors Nanowires Photoluminescence

作者机构：

[ 1 ] [Wang, Y.Q.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China
[ 2 ] [Wang, R.Z.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China
[ 3 ] [Wang, B.B.]College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054, China
[ 4 ] [Wang, B.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China
[ 5 ] [Yan, H.]College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang Distract, Beijing 100124, China

通讯作者信息：

王如志
[wang, r.z.]college of materials science and engineering, beijing university of technology, 100 pingleyuan, chaoyang distract, beijing 100124, china

电子邮件地址：

wrz@bjut.edu.cn

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