CMOS 1.2V bandgap voltage reference design - 文章详情页

作者：

Feng, Chao (Feng, Chao.) | Wang, Jinhui (Wang, Jinhui.) | Wu, Wei (Wu, Wei.) | Hou, Ligang (Hou, Ligang.) | Kang, Jianbo (Kang, Jianbo.)

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EI Scopus

摘要：

A　typical　bandgap　voltage　reference　based　on　CSMC　0.35　μm　CMOS　technology　is　designed　and　fabricated.　The　overall　bandgap　architecture　is　optimized　to　achieve　high　accuracy　temperature　and　power　supply　independent　voltage　reference.　The　design　consists　of　the　bandgap　core　circuit,　op-amp,　and　start-up　circuit.　The　test　results　show　that　the　bandgap　reference　circuit　provides　reference　voltage　of　1.2128　V　to　1.2175　V　with　3.3　V　power　supply　and　temperature　range　from　-40°C　to　80°C　simultaneously,　and　the　temperature　coefficient　is　32.2ppm/°C.　The　total　layout　area　including　dummy　structures　is　135　um×236　um.　©　2013　IEEE.

关键词：

CMOS integrated circuits Energy gap Integrated circuit design Operational amplifiers Temperature Voltage measurement

作者机构：

[ 1 ] [Feng, Chao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wang, Jinhui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Wu, Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Hou, Ligang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Kang, Jianbo]616# Zhongshan West Road, Shijiazhuang, Hebei 051008, China

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