760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation - 文章详情页

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We　report　a　novel　semiconductor　passively　mode-locked　edge-emitting　laser　based　on　a　multi-quantum-well　structure,　emitting　at　766　nm　and　enabling　the　generation　of　a　stable　19.4-GHz　pulse　train　with　a　pulse　duration　of　∼5　ps.　©　2013　The　Optical　Society.

关键词：

Semiconductor quantum wells Mode-locked fiber lasers Quantum well lasers Passive mode locking

作者机构：

[ 1 ] [Wang, H.L.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
[ 2 ] [Kong, L.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom
[ 3 ] [Bajek, D.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom
[ 4 ] [Haggett, S.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom
[ 5 ] [Wang, X.L.]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Cui, B.F.]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Pan, J.Q.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
[ 8 ] [Ding, Y.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom
[ 9 ] [Cataluna, M.A.]School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom

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