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作者:

Teo, K.B.K. (Teo, K.B.K..) | You, B. (You, B..) | Rupesinghe, N.L. (Rupesinghe, N.L..) | Newham, A. (Newham, A..) | Greenwood, P. (Greenwood, P..) | Buttress, S. (Buttress, S..) | Cole, M.T. (Cole, M.T..) | Tao, L. (Tao, L..) | Lee, J. (Lee, J..) | Akinwande, D. (Akinwande, D..) | Celebi, K. (Celebi, K..) | Park, H.G. (Park, H.G..) | Sun, J. (Sun, J..)

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EI Scopus

摘要:

Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed. © 2013 IEEE.

关键词:

Nanotechnology Activation energy Silicon wafers Graphene Graphene transistors Copper compounds Hole mobility Silica Growth kinetics

作者机构:

  • [ 1 ] [Teo, K.B.K.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 2 ] [You, B.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 3 ] [Rupesinghe, N.L.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 4 ] [Newham, A.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 5 ] [Greenwood, P.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 6 ] [Buttress, S.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 7 ] [Cole, M.T.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 8 ] [Tao, L.]Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, United States
  • [ 9 ] [Lee, J.]Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, United States
  • [ 10 ] [Akinwande, D.]Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, United States
  • [ 11 ] [Celebi, K.]Department of Mechanical and Process Engineering, ETH Zurich, Zurich CH-8092, Switzerland
  • [ 12 ] [Park, H.G.]Department of Mechanical and Process Engineering, ETH Zurich, Zurich CH-8092, Switzerland
  • [ 13 ] [Sun, J.]Optoelectronics Lab, Beijing University of Technology, Beijing 100124, China
  • [ 14 ] [Sun, J.]MC2, Chalmers University of Technology, 41296, Sweden

通讯作者信息:

  • [teo, k.b.k.]aixtron ltd, nanoinstruments, swavesey, cambridge cb24 4fq, united kingdom

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ISSN: 1944-9399

年份: 2013

页码: 1200-1203

语种: 英文

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