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作者:

Ding, Ying (Ding, Ying.) | Ji, Wei (Ji, Wei.) | Chen, Jingxiang (Chen, Jingxiang.) | Zhang, Song (Zhang, Song.) | Wang, Xiaoling (Wang, Xiaoling.) | Wang, Huolei (Wang, Huolei.) | Ni, Haiqiao (Ni, Haiqiao.) | Pan, Jiaoping (Pan, Jiaoping.) | Cui, Bifeng (Cui, Bifeng.) | Cataluna, Maria Ana (Cataluna, Maria Ana.)

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EI Scopus

摘要:

This paper reports on the mode-locked operation of a 980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth. Optical pulses with 10-ps pulse duration were generated at a repetition rate of 955 MHz, with an average output power of 39.3 mW - which corresponds to a peak power of 4.1 W, generated directly from the oscillator. The RF spectrum displays a -3dB RF linewidth of only ∼40 Hz, as well as a 60-dB dynamic contrast, revealing the exceptionally low-noise fundamental mode-locked operation of this laser. At a repetition rate of ∼1 GHz, the highest peak power of 5.26 W was achieved, albeit with an increased -3dB RF linewidth of ∼100 Hz. The twosection chip incorporated an active region with a dual InGaAs quantum well sandwiched by an asymmetrical waveguide, and was operated at room temperature. By taking advantage of the broad tunability of the repetition rate which externalcavity lasers can afford, we also investigated the limits of stable fundamental mode-locked operation at the lowest repetition rates (or maximum external cavity lengths). © 2013 SPIE.

关键词:

Gallium alloys Gallium compounds Indium alloys Linewidth Mode-locked fiber lasers Passive mode locking Pulse repetition rate Quantum well lasers Semiconducting indium gallium arsenide Semiconductor alloys Semiconductor quantum wells

作者机构:

  • [ 1 ] [Ding, Ying]Ultrafast Photonics Group, School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom
  • [ 2 ] [Ding, Ying]State Key Laboratory on Integrated Optoelectronics, IS Division, Beijing 100083, China
  • [ 3 ] [Ji, Wei]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Chen, Jingxiang]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Zhang, Song]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 6 ] [Wang, Xiaoling]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 7 ] [Wang, Huolei]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • [ 8 ] [Ni, Haiqiao]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • [ 9 ] [Pan, Jiaoping]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • [ 10 ] [Cui, Bifeng]Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 11 ] [Cataluna, Maria Ana]Ultrafast Photonics Group, School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom

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ISSN: 0277-786X

年份: 2013

卷: 8640

语种: 英文

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SCOPUS被引频次: 2

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