FE based thermal analysis of void effect in IGBT mechanical module - 文章详情页

作者：

Fang, Xinyu (Fang, Xinyu.) | Zhang, Xiaoling (Zhang, Xiaoling.) | Gong, Weihua (Gong, Weihua.) | Zhang, Jian (Zhang, Jian.)

收录：

EI Scopus

摘要：

In　this　paper,　a　reasonable　model　under　the　thermal　void　effect　of　the　Insulate　Gate　Bipolar　Transistor　is　been　built.　Finite　element　analysis　(FE)　is　introduced　to　analyze　thermal　characteristics　of　the　model.　The　results　indicate　that　the　heat　distribution　of　IGBT　is　determined　of　voids　with　different　sizes,　positions　and　the　intensity.　Besides,　the　synergy　of　void　effect　and　heat　coupling　effect　would　significantly　increase　the　temperature　of　the　chip.　©　(2012)　Trans　Tech　Publications,　Switzerland.

关键词：

Finite element method Insulated gate bipolar transistors (IGBT) Manufacture Thermoanalysis

作者机构：

[ 1 ] [Fang, Xinyu]Reliability Physics Lab, Beijing University of Technology Beijing, China
[ 2 ] [Zhang, Xiaoling]Reliability Physics Lab, Beijing University of Technology Beijing, China
[ 3 ] [Gong, Weihua]Reliability Physics Lab, Beijing University of Technology Beijing, China
[ 4 ] [Zhang, Jian]Reliability Physics Lab, Beijing University of Technology Beijing, China

通讯作者信息：

电子邮件地址：

xinyuf@uvic.ca

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