作者：
Shu, Lei
(Shu, Lei.)
|
Wang, Liang
(Wang, Liang.)
|
Zhou, Xin
(Zhou, Xin.)
|
Li, Tong-De
(Li, Tong-De.)
|
Yuan, Zhang-Yi'an
(Yuan, Zhang-Yi'an.)
|
Sui, Cheng-long
(Sui, Cheng-long.)
|
Li, Yuan
(Li, Yuan.)
|
Wang, Bi
(Wang, Bi.)
|
Zhao, Yuan-Fu
(Zhao, Yuan-Fu.)
|
Galloway, Kenneth F.
(Galloway, Kenneth F..)
摘要：
The breakdown voltage (BVDS) variation of 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistors (NLDMOSFETs) is examined after exposure to a total ionizing dose (TID). The results for OFF bias and ON bias are explored.For the OFF bias, BVDS increases first and then degrades with accumulated dose. For the ON bias, the irradiated device shows soft breakdown after irradiation. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.
关键词：
400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)
total ionizing dose (TID)
technology computer-aided design (TCAD) simulations
radiation effects
laterally diffused metal-oxide-semiconductor (LDMOS)
BVDS variations
SOI
