A high order temperature curvature compensated CMOS bandgap reference - 文章详情页

作者：

Peng, Zhenyu (Peng, Zhenyu.) | Lv, Changzhi (Lv, Changzhi.) | She, Shuojie (She, Shuojie.)

收录：

EI Scopus

摘要：

This　paper　presents　a　second-order　corrected　bandgap　reference　(BGR)　based　on　TSMC　0.35μm　2P3M　CMOS　process.　This　novel　proposed　CMOS　bandgap　reference　take　advantage　of　the　high　temperature　coefficient　(TC)　of　some　resistors,　to　compensate　the　high-order　temperature　curvature　of　the　base-emitter　voltage　(VBE).　This　circuit　can　achieve　temperature　coefficient　of　1.5ppm/°C　for　temperature　from　40　to　120°C　at　5　V　power　supply.　The　proposed　circuit　will　find　application　in　the　high　precision　analog　and　digital　circuits.　©　2012　IEEE.

关键词：

Temperature CMOS integrated circuits Energy gap

作者机构：

[ 1 ] [Peng, Zhenyu]Reliability Physics Lab, Beijing University of Technology, Beijing, China
[ 2 ] [Lv, Changzhi]Reliability Physics Lab, Beijing University of Technology, Beijing, China
[ 3 ] [She, Shuojie]Reliability Physics Lab, Beijing University of Technology, Beijing, China

通讯作者信息：

电子邮件地址：

pengzhyu@emails.bjut.edu.cn

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