Research on thermal-electrical characteristics of SiGe HBTs with different Ge profiles - 文章详情页

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EI Scopus

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The　thermal-electrical　characteristics　of　SiGe　HBTs　with　three　kinds　of　Ge　profiles　(box,　trapezoidal　and　triangular)　in　the　base　are　investigated　in　this　paper.　The　results　show　that　SiGe　HBTs　with　trapezoidal　and　triangular　Ge-profile　could　improve　the　peak　temperature,　non-uniformity　of　surface　temperature　distribution,　and　the　sensibility　of　the　gain　and　cutoff　frequency　to　temperature　compared　with　SiGe　HBT　with　box　Ge　profile.　However,　these　properties　of　SiGe　HBT　with　triangular　Ge　profile　are　superior　to　that　of　trapezoidal　Ge　profile.　©　2012　IEEE.

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Cutoff frequency Germanium Millimeter waves Si-Ge alloys

作者机构：

[ 1 ] [Zhang, Yujie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Xie, Hongyun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Guo, Zhenjie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Xing, Guanghui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Lu, Zhiyi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

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